Shady Agwa

Research Fellow


Curriculum vitae


[email protected]


+44 (0) 7950676030


School of Engineering

The University of Edinburgh

1.24D Murchison House, King's Buildings Campus, Edinburgh, EH9 3BF, UK



A 1T1R+2T Analog Content-Addressable Memory Pixel for Online Template Matching


Journal article


Shady O. Agwa, G. Papandroulidakis, T. Prodromakis
International Symposium on Circuits and Systems, 2023

Semantic Scholar DBLP DOI
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APA   Click to copy
Agwa, S. O., Papandroulidakis, G., & Prodromakis, T. (2023). A 1T1R+2T Analog Content-Addressable Memory Pixel for Online Template Matching. International Symposium on Circuits and Systems.


Chicago/Turabian   Click to copy
Agwa, Shady O., G. Papandroulidakis, and T. Prodromakis. “A 1T1R+2T Analog Content-Addressable Memory Pixel for Online Template Matching.” International Symposium on Circuits and Systems (2023).


MLA   Click to copy
Agwa, Shady O., et al. “A 1T1R+2T Analog Content-Addressable Memory Pixel for Online Template Matching.” International Symposium on Circuits and Systems, 2023.


BibTeX   Click to copy

@article{shady2023a,
  title = {A 1T1R+2T Analog Content-Addressable Memory Pixel for Online Template Matching},
  year = {2023},
  journal = {International Symposium on Circuits and Systems},
  author = {Agwa, Shady O. and Papandroulidakis, G. and Prodromakis, T.}
}

Abstract

The template matching approach has a promising momentum to build energy-efficient edge classifiers for var-ious implantable and wearable medical devices. To mitigate the analog/digital cross-domain interfacing complexity, analog content-addressable memories can be used efficiently to form the back-end classifiers by receiving the analog inputs and generating the digital classification outputs. This paper presents a novel memristor-based analog content-addressable memory pixel 1TIR+2T with 2.0x smaller footprint than its counterparts in the literature. The new compact pixel utilizes only one RRAM device through a 1T1R voltage divider circuit while exploiting the complementary behavior of the nMOS and pMOS transistors to determine the lower and upper bounds of the matching voltage range. The simulation results show that the 1T1R+2T pixel has a promising tunability with matching windows range from 50 mV to 200 mV according to the RRAM resistance value of the 1T1R voltage divider.


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