APA
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Mifsud, A., Shen, J., Feng, P., Xie, L., Wang, C.-H., Pan, Y., … Constandinou, T. (2022). A CMOS-based Characterisation Platform for Emerging RRAM Technologies. International Symposium on Circuits and Systems.
Chicago/Turabian
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Mifsud, A., Jiawei Shen, Peilong Feng, L. Xie, Chao-Hsiang Wang, Yihan Pan, S. Maheshwari, et al. “A CMOS-Based Characterisation Platform for Emerging RRAM Technologies.” International Symposium on Circuits and Systems (2022).
MLA
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Mifsud, A., et al. “A CMOS-Based Characterisation Platform for Emerging RRAM Technologies.” International Symposium on Circuits and Systems, 2022.
BibTeX Click to copy
@article{a2022a,
title = {A CMOS-based Characterisation Platform for Emerging RRAM Technologies},
year = {2022},
journal = {International Symposium on Circuits and Systems},
author = {Mifsud, A. and Shen, Jiawei and Feng, Peilong and Xie, L. and Wang, Chao-Hsiang and Pan, Yihan and Maheshwari, S. and Agwa, Shady O. and Stathopoulos, S. and Wang, Shiwei and Serb, Alexander and Papavassiliou, C. and Prodromakis, T. and Constandinou, T.}
}
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device’s resistance range to be between 1k$\Omega$ and 10M$\Omega$ with a minimum voltage range of ±1.5V on the device.